sot-23 plastic-encapsulate transistors ss8050 transistor (npn) features complimentary to ss8550 marking:y1 maximum ratings (ta=25 unless otherwise noted) symbol ? parameter ? value ?? units vcbo collector-base voltage - ? 40 v vceo collector-emitter voltage - ? 25 v vebo emitter-base voltage - ? 5 v ic collector current -continuous 1.5 a pc collector power dissipation ?? 0.625 w tj junction temperature 150 tstg storage temperature ?? -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter ? symbol ? test conditions min ? typ ? max ? unit collector-base breakdown voltage - ? v(br)cbo ic= 100 a, ie=0 40 v collector-emitter breakdown voltage - ? v(br)ceo ic= 1ma, ib=0 25 v emitter-base breakdown voltage - ? v(br)ebo ie=100 a, ic=0 5 v collector cut-off current - ? icbo vcb=20 v , ie=0 1 a collector cut-off current - ? iceo vce=15v , ib=0 10 a emitter cut-off current - ? iebo veb=5v , ic=0 1 a dc current gain ? hfe vce=1v, ic= 100ma 80 400 collector-emitter sa turation voltage - ? vce(sat) ic=800ma, ib= 80ma 0.5 v base-emitter satura tion voltage - ? vbe(sat) ic=800ma, ib= 80ma 1.2 v classification of hfe range 80-100 100-200 200-400 400-600 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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